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SUBMINIATURE PHOTOINTERRUPTER
Description
The MIR-3301-P consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing. It is a reflective subminiature photointerrupter.
MIR-3301-P
Package Dimensions
Unit: mm
Features
Compact and thin MIR-3301 : long lead type Optimum detecting diatance : 0.8 - 1.0 mm Wavelength : 940nm Visible light cut-off type Flat lead type
E mitte r D Anode A T OP VIEW C Colle ctor B Cathode
NOTE : (1).Tolerance:0.2mm (2). ( ) Reference dimensions
Absolute Maximum Ratings
@ TA=25oC
Parameter Continuous Forward Current INPUT Reverse Voltage Power Dissipation Collector-emitter breakdown voltage OUTPUT Emitter-Collector breakdown voltage Collector power dissipation Total power dissipation Operating Temperature Range Storage Temperature Range
Symbol IF VR Pad V(BR)CEO V(BR)ECO PC PTOT Topr Tstg
Minimum Rating Maximum Rating 50 5 75 30 5 75 100 -25 C to + 85 C -40 oC to + 100oC
o o
Unit mA V mW V V mW mW
Lead Soldering Temperature (within 5 sec, minimum 1.6mm from body) at 260 oC
Unity Opto Technology Co., Ltd.
12/12/2001
MIR-3301-P
Optical-Electrical Characteristics
Parameter Input Output Forward Voltage Reverse Current Collector Dark Current Symbol VF IR Iceo B
*1
Min . 38 56 80 112 -
Typ . 1.2 20 20 -
Max . 1.4 10 100 75 108 151 216 100 100 0.1
Unit . V A nA
Test Conditions IF=20mA VR=5V Vce=10V
Transfer Characteristics
Collector Current
Ic
C D E tr tf
A
IF=4mA,Vce=5V
Response Time (RISE) Response Time (FALL)
*2
S S A
Ic=100A,Vce=2V RL=1K,d=1mm IF=4mA,Vce=5V
Leak Current
ILEAK
*1 THE CONDITION AND ARRANGEMENT OF THE REFLECTIVE OBJECT ARE SHOWN AS FOLLOWING . *2 WITHOUT REFLECTIVE OBJECT.
TEST CONDITION AND ARRANGEMENT FOR COLLECTOR CURRENT
Al refletive Surface 2 mm-thick glass Device
Typical Optical-Electrical Characteristic Curves
Forward Current IF (mA) Power Dissipation (mW)
60 50 40 30 20 10 0 -25 0 25 50 75 100 120 100 80 60 40 20 0 -25 0 25 50 75 100 PTOT Pad , PC
Ambient Temperature TA (oC) Fig.1 forward Current VS. Ambient Temperature Forward Current IF (mA) Collector Current Ic (A)
50 40 30 20 10 0 0.0 0.5 1.0 1.5 600 500 400 300 200 100 0 0
Ambient Temperature TA ( oC ) Fig.2 Power Dissipation vs. Ambient Temperature
Vce=5V Ta=25oC
5
10
15
20
Forward Voltage VF (V) Fig.3 Forward Current VS Forward Voltage
Forward Current IF (mA) Fig.4 Collector Current vs. Forward Current
Unity Opto Technology Co., Ltd.
02/04/2002
MIR-3301-P
Typical Optical-Electrical Characteristic Curves
Collector Current Ic (A)
350 300 250 200 150 100 50 0 0 2 4 6 8 10 12
1mA
Relative Collector Current (%)
Ta=25oC IF=10mA 4mA
120 100 80 60 40 20 0 -25 0 25 50 75 100
Collector-Emitter Voltage Vce (V) Fig.5 Collector Current vs. Vce Collector Dark Current ICEO
10-6 10
-7
Ambient Temperature TA (oC) Fig.6 Relative Collector Current VS.
100
Response Time (s)
VCE=10V
tr tr td
10 1 0.1 0.01
10-8 10-9 10-10 0 25 50 75 100
ts
VCE=2V IC=100A T a=25oC
0.1
1
10
Ambient Temperature TA (oC) Fig.7 Collector Dark Current vs. Ambient Temperature Relative Collector Current (%) Relative Sensitivity (%)
100 80 60 40 20 0 700 800 900 1000 1100 1200 Ta=25oC 120 100 80 60 40 20 0 0 1
Load Resistance Rt (K) Fig.8 Response Time vs. Load Resistance
IF=4mA VCE=5V T A=25oC
2
3
4
5
6
7
8
9 10
Wavelength (nm) Fig.9 Spectral Sensitivity (Detecting side)
Distance (mm) Fig.10 Relative Collector Current vs. Distance between MIR-3301 and Card
Test Circuit for Response Time
Vcc Input RD RL Input
Output Output 10% td tr 90% tf
ts
Unity Opto Technology Co., Ltd.
02/04/2002

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